Fabrication of a Schottky diode
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Authors
Wang, Leonardo
Issue Date
2025-04-13
Type
Other
Language
en_US
Keywords
Scholarship Sewanee 2025 , University of the South, Fabrication, Schottky diode, Etching, Ohmic contact, rectifying contact
Alternative Title
Abstract
The Schottky diode is a circuit component with exhaustive applications in microwaves, GPS tracking, and solar panels. Unlike rectifying diodes formed by a PN junction, a Schottky diode is established when a metal is joined to a doped semiconductor. This subtle difference in the Schottky diode produces a rectifying IV curve as well as superior switching speed and lower power dissipation when compared to the rectifying diodes According to physics teacher article Volume 58, Issue 1, Schottky diode properties can be replicated with a silicon wafer, a hot lamp, gold leaf foil, and aluminum foil. However, the Schottky barrier diodes created by this process failed to match the rectifying behavior of the commercial 1N4001 rectifying diode in reverse biases for N-type silicon. Throughout my research, I will refine the experimental procedures to create a Schottky barrier diode with correct rectifying behavior under both forward and reverse bias conditions.
Description
Citation
Publisher
University of the South